s m d ty p e w w w . ke x in . com . c n 1 m osfe t p - ch an n el m osf et a o 4441 ( k o 4 4 4 1 ) f e a tu r e s v d s ( v ) = - 6 0 v i d = - 4 a ( v g s = - 1 0 v ) r d s ( o n ) 1 0 0 m ( v g s = - 1 0 v ) r d s ( o n ) 1 3 0 m ( v g s = - 4 . 5 v ) sop -8 0.21 +0.04 -0.02 1.50 0.15 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain a b s o l u te m a x i m u m ra ti n g s t a = 2 5 s y m b o l r a t i n g u n i t v d s - 6 0 v g s 2 0 t a = 2 5 c - 4 t a = 7 0 c - 3 . 1 i d m - 2 0 t a = 2 5 c 3 . 1 t a = 7 0 c 2 t 1 0 s 4 0 s t e a d y - s t a t e 7 5 r t h jl 3 0 t j 1 5 0 t st g - 5 5 t o 1 5 0 v / w p o w e r d i s s i p a t i o n t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - a m b i e n t t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - l e a d j u n c t i o n t e m p e r a t u r e j u n c t i o n s t o r a g e t e m p e r a t u r e r a n g e r t h ja p d p a r a m e t e r d r a i n - s o u r c e v o l t a g e g a t e - s o u r c e v o l t a g e c o n t i n u o u s d r a i n c u r r e n t w p u l s e d d r a i n c u r r e n t a i d g d s
s m d ty p e w w w . k e x i n . c o m . c n 2 m os f e t p - ch an n el m osf et a o 4441 ( k o 4 4 4 1 ) e l e c tr i c a l ch a r a c te r i s ti c s t a = 2 5 p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = - 2 5 0 a , v g s = 0 v - 6 0 v v d s = - 4 8 v , v g s = 0 v - 1 v d s = - 4 8 v , v g s = 0 v , t j = 5 5 - 5 g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 2 0 v 1 0 0 n a g a t e t h r e s h o l d v o l t a g e v g s ( t h ) v d s = v g s , i d = - 2 5 0 u a - 1 - 3 v v g s = - 1 0 v , i d = - 4 a 1 0 0 v g s = - 1 0 v , i d = - 4 a t j = 1 2 5 1 3 0 v g s = - 4 . 5 v , i d = - 3 a 1 3 0 o n s t a t e d r a i n c u r r e n t i d ( o n ) v g s = - 1 0 v , v d s = - 5 v - 2 0 a f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = - 5 v , i d = - 4 a 1 0 s i n p u t c a p a c i t a n c e c i ss 9 3 0 1 1 2 0 o u t p u t c a p a c i t a n c e c o ss 8 5 r e v e r s e t r a n s f e r c a p a c i t a n c e c r ss 3 5 g a t e r e s i s t a n c e r g v g s = 0 v , v d s = 0 v , f = 1 m h z 7 . 2 9 t o t a l g a t e c h a r g e ( 1 0 v ) 1 6 2 0 t o t a l g a t e c h a r g e ( 4 . 5 v ) 8 1 0 g a t e s o u r c e c h a r g e q g s 2 . 5 g a t e d r a i n c h a r g e q g d 3 . 2 t u r n - o n d e l a y t i m e t d ( o n ) 8 t u r n - o n r i s e t i m e t r 3 . 8 t u r n - o f f d e l a y t i m e t d ( o f f ) 3 1 . 5 t u r n - o f f f a l l t i m e t f 7 . 5 b o d y d i o d e r e v e r s e r e c o v e r y t i m e t r r 2 7 3 5 b o d y d i o d e r e v e r s e r e c o v e r y c h a r g e q r r 3 2 n c m a x i m u m b o d y - d i o d e c o n t i n u o u s c u r r e n t i s - 4 a d i o d e f o r w a r d v o l t a g e v s d i s = - 1 a , v g s = 0 v - 1 v v g s = - 1 0 v , v d s = - 3 0 v , i d = - 4 a p f n c q g n s z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s u a m v g s = - 1 0 v , v d s = - 3 0 v , r l = 7 . 5 , r g e n = 3 r d s ( o n ) s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e i f = - 4 a , d i / d t = 1 0 0 a / u s v g s = 0 v , v d s = - 3 0 v , f = 1 m h z n o t e : t h e s t a t i c c h a r a c t e r i s t i c s i n f i g u r e s 1 t o 6 a r e o b t a i n e d u s i n g <300 s p u l s e s , d u t y c y c l e 0 . 5 % m a x . m a r k i n g 4 4 4 1 k c * * * * m a r k i n g
s m d ty p e w w w . k e x i n . c o m . c n 3 m osf e t p - ch an n el m osf et a o 4441 ( k o 4 4 4 1 ) t y p i c a l ch a r a c te r i s i ti c s 0 5 10 15 20 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics - i d ( a ) v gs =-3.0v -3.5v -4.5v -10v -4.0v -5.0v -6.0v 0 2 4 6 8 10 1 1.5 2 2.5 3 3.5 4 -v gs (volts) figure 2: transfer characteristics - i d ( a ) 70 80 90 100 110 0 2 4 6 8 10 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r d s(o n ) ( m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics - i s ( a ) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature n o rm a lize d o n - r esis t a n c e v gs =-10v i d =-4a v gs =-4.5v i d =-3a 60 80 100 120 140 160 180 200 2 4 6 8 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r d s(o n ) ( m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-4a 25c 125c i d =-3a
s m d ty p e w w w . k exi n . co m . c n 4 m osfe t . p - ch an n el m osf et a o 4441 ( k o 4 4 4 1 ) t y p i c a l ch a r a c te r i s i ti c s 0 2 4 6 8 10 0 2 0 1 0 -q g (nc) figure 7: gate-charge characteristics - v g s ( v o l t s ) 0 500 1000 1500 0 10 20 30 40 50 60 -v ds (volts) figure 8: capacitance characteristics c a p ac i ta n ce ( pf ) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) p o w e r ( w ) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z j a n o rm a li ze d t r a n sie n t th e rm a l r es i sta n c e c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) - i d ( a m p s ) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s d c r ds(on) limited t j( m a x ) =150c, t a =25c v ds =-30v i d =-4a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =40c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s
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